A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

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• 作者：Adelmo Ortiz-Conde^a ; ^{ortizc@usb.ve} ; Andrea Sucre-Gonzá ; lez^a ; Fabiá ; n Zá ; rate-Rincó ; n^b ; Reydezel Torres-Torres^b ; Roberto S. Murphy-Arteaga^b ; Juin J. Liou^c ; Francisco J. Garcí ; a-Sá ; nchez^a
• 关键词：MOSFET model parameter extraction ; Mobility degradation ; Parasitic series resistance
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：1-16
• 全文大小：2047 K
• 卷排序：69

文摘

The performance of modern MOSFETs is limited by the presence of parasitic series resistances and mobility degradation. This article reviews and assesses 18 of the extraction methods currently used to determine the values of parasitic series resistances and mobility degradation from the measured drain current. The methods are separated in 3 groups: seven different methods that use the transfer characteristics of several devices having different mask channel lengths; five methods based on a single device with different drain and gate bias; six methods which account for the asymmetry between drain and source resistance.