Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

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• 作者：M. Lamhamdi^a ; ^b ; ; F. Cayrel^a ; E. Frayssinet^d ; A.E. Bazin^c ; A. Yvon^c ; E. Collard^c ; Y. Cordier^d ; D. Alquier^a
• 关键词：Gallium nitride ; Ion implantation ; Scanning capacitance microscopy ; Atomic Force Microscopy ; Dopant profiling
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：372
• 期：Complete
• 页码：67-71
• 全文大小：1754 K

文摘

Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p–n and unipolar junctions. For both p–n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p–n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.