GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
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- 作者：Yvon Cordiera ; yc@crhea.cnrs.fr" class="auth_mail" title="E-mail the corresponding author ; Benjamin Damilanoa ; Phannara Aingb ; Catherine Chaixb ; Florence Linezc ; Filip Tuomistoc ; Philippe Venné ; guè ; sa ; Eric Frayssineta ; Denis Lefebvrea ; Marc Portaila ; Maud Nemoza
- 关键词：A1. Crystal morphology ; A1. Impurities ; A1. Point defects ; A3. Molecular beam epitaxy ; A3. Quantum wells ; B1. Nitrides
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 January 2016
- 年：2016
- 卷：433
- 期：Complete
- 页码：165-171
- 全文大小：1895 K
文摘
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GaN films were grown by Plasma Assisted MBE with growth rates up to 2.1 µm/h.
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Growth rates well correlate with the optical signal emitted by the nitrogen plasma.
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Optical and structural properties of GaN films are not sensitive with growth rate.
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Impurity and point defects concentrations have been studied.
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GaN/AlGaN QWs on GaN grown at low and high rates exhibit similar optical properties.