Investigation of electrostatic performance for a conical surrounding gate MOSFET with linearly modulated work-function

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• 作者：B.S. Ramkrishna^a ; B. Jena^b ; S. Dash^b ; G.P. Mishra^b ; ^{gurumishra@soauniversity.ac.in}
• 关键词：Conical surrounding gate ; Tapering ratio ; Work-function modulation ; Intrinsic delay time
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：152-159
• 全文大小：1818 K
• 卷排序：101

文摘

A continuous variation of work-function based gate metal is introduced in conical surrounding model. This new work-function modulated model provides better On current and reduced DIBL. Here the tapering ratio of the device is optimized to 0.98.