Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
详细信息 查看全文
- 作者：Chen Donga ; b ; Xiuxun Hana ; c ; xxhan@licp.cas.cn" class="auth_mail" title="E-mail the corresponding author ; Xin Gaod ; Yoshio Ohshitae ; Masafumi Yamaguchie
- 关键词：GaAsN ; Schottky diode ; Growth orientation ; I&ndash ; V characteristics ; C&ndash ; V characteristics ; Electrical properties
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：5 February 2016
- 年：2016
- 卷：657
- 期：Complete
- 页码：325-329
- 全文大小：1243 K
文摘
- •
The Schottky diodes of Cu on n-type GaAsN with (311)A/B orientations were fabricated.
- •
Effect of N incorporation on the electrical properties of Cu/GaAsN was investigated.
- •
Electrical performance of Cu/GaAsN diode can be tailored by the growth orientation.
- •
The Schottky diodes constructed on (311)A GaAsN exhibit better performance.