Optical characterization and carriers transfer between localized and delocalized states in Si-doped GaAsN/GaAs epilayer
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- 作者：F. Hassena ; b ; fohassen@kku.edu.sa" class="auth_mail" title="E-mail the corresponding author ; fredj.hassen@fsm.rnu.tn" class="auth_mail" title="E-mail the corresponding author ; Z. Zaabouba ; M. Bouhlela ; M. Naffoutia ; H. Maarefa ; N.M. Garnib
- 关键词：Diluted GaAsN ; Decay time ; Radiative recombination ; Transfer time
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：2 November 2015
- 年：2015
- 卷：594
- 期：part_PA
- 页码：168-171
- 全文大小：367 K
文摘
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Recombination process in diluted GaAsN studied by time resolved photoluminescence.
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Three recombination processes versus temperature are shown and compared to FWHM.
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The carriers transfer time between localized and delocalized states is measured.