Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations
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- 作者：Jian Lia ; Xiuxun Hana ; b ; xxhan@licp.cas.cn" class="auth_mail" title="E-mail the corresponding author ; Chen Donga ; c ; Changzeng Fand ; Yoshio Ohshitae ; Masafumi Yamaguchie
- 关键词：GaAsN ; First principle calculation ; N incorporation ; Growth orientation ; Chemical potentials
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：5 December 2016
- 年：2016
- 卷：687
- 期：Complete
- 页码：42-46
- 全文大小：1341 K
文摘
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Impact of the substrate orientation on the N incorporation in GaAsN has been investigated.
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Effect of N incorporation on the surface structures of GaAs was investigated.
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N dopants prefer to substitute As atoms in (311)B surface at the same situation.
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The theoretical findings agree well with the SIMS measurement results on atomic concentration.