Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation
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- 作者：Noriyuki Urakamia ; urakami-n@int.ee.tut.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Keisuke Yamanea ; Hiroto Sekiguchia ; Hiroshi Okadaa ; b ; Akihiro Wakaharaa ; b ; wakahara@ee.tut.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Nitridation ; A3. Molecular beam epitaxy ; B1. Dilute nitride ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 February 2016
- 年：2016
- 卷：435
- 期：Complete
- 页码：19-23
- 全文大小：1071 K
文摘
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MBE growth of dilute GaAsN alloys by repeated cycle of nitridation and growth of GaAs overlayer.
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Controllable of N composition between 1% and 5% by the combination of growth conditions.
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Achievement of high PL intensity for surface nitridation compared to that for conventional growth.