Double acceptor in p-type GaAsN grown by chemical beam epitaxy
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- 作者：Omar Elleuch ; mr.omar.elleuch@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Li Wang ; Kan-Hua Lee ; Kazuma Ikeda ; Nobuaki Kojima ; Yoshio Ohshita ; Masafumi Yamaguchi
- 关键词：A3. Chemical beam epitaxy
- 刊名：Journal of Crystal Growth
- 出版年：2015
- 出版时间：15 December 2015
- 年：2015
- 卷：432
- 期：Complete
- 页码：45-48
- 全文大小：787 K
文摘
• Charges of acceptors in CBE-grown GaAsN are obtained using the Poole–Frenkel model.
• Emission rates from acceptors became higher, when the electric field increases.
• This means that the energies required for the emission decrease.
• Analysis of emission-enhancement indicates that charges of acceptors are −1 and −2.
• Thus, the acceptors originate from the same defect, acting as a double acceptor.