文摘
The study demonstrates an approach to synthesize nanostructure SnO2 thin films on TCO (transparent conducting oxide) coated glass substrates by galvanic technique. Aqueous solution of hydrated stannic chloride (SnCl4鈰?H2O) in potassium nitrate (KNO3) solution was used as the working solution. The process involves no sophisticated reactor or toxic chemicals, and proceeds continuously under ambient condition; it provides an economic way of synthesizing nanostructure SnO2 semiconductor thin films. The influence of sintering temperature on crystalline structure, morphology, electrical and dielectric properties has been studied. A detail analysis of I鈭?em>V, C鈭?em>V and dielectrics for annealed SnO2 thin films have been carried out. The morphological advantage i.e. nanoporous flake like structure allows more efficient transport of reactant molecules to the active interfaces and results a strong photocatalytic activity for degrading methyl orange (MO) dye.