Initial CaF2 reactions on Si(1 e:hsp>1 e:hsp>4)-2 e:hsp>× e:hsp>1: Isolated silicides, faceting and partial CaF adsorption
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- 作者：Hidong Kim ; Ganbat Duvjir ; Otgonbayar Dugerjav ; Huiting Li ; Jae M. Seo ; seojm@jbnu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Calcium silicide ; Calcium fluoride ; Surface energy ; High index silicon surfaces ; Scanning tunneling microscopy ; Photoemission spectroscopy
- 刊名：Applied Surface Science
- 出版年：2015
- 出版时间：1 December 2015
- 年：2015
- 卷：357
- 期：part_PA
- 页码：268-272
- 全文大小：1678 K
文摘
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We fabricate isolated and symmetric Ca-silicide units on Si(1 1 4)-2 × 1.
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At 0.4 ML, a (1 1 3) facet is developed through substrate etching by F.
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A 2×2 CaF overlayer is formed uniformly only on the (1 1 3) facet.
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The 2×2 CaF overlayer has no net dipole moment.