Physical properties of Bi doped CdTe thin films grown by the CSVT method

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• 作者：O. Vigil-Galá ; n ; J. Sastré ; -Herná ; ndez ; F. Cruz-Gandarilla ; J. Aguilar-Herná ; ndez ; E. Marí ; n ; G. Contreras-Puente ; E. Saucedo ; C.M. Ruiz ; V. Berm&#xfa ; dez and M. Tufi&#xf1 ; o-Vel&#x
• 关键词：CdTe ; Thin films ; Bi doping ; Physical properties ; CSVT method
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2006
• 出版时间：22 September 2006
• 年：2006
• 卷：90
• 期：15
• 页码：2228-2234
• 全文大小：153 K

文摘

A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1×10¹⁷–8×10¹⁸ cm⁻³ range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6×10⁵ Ω-cm for Bi concentrations of 8×10¹⁸ cm⁻³. These are meaningful results for CdTe-based solar cells.