Structure, electrical and optical properties of TiN_x films by atmospheric pressure chemical vapor deposition

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• 作者：Gangfeng Duan^a ; Gaoling Zhao ; ^a ; ^{glzhao@zju.edu.cn} ; Ling Wu^a ; Xiaoxuan Lin^a ; Gaorong Han^a
• 关键词：Titanium nitride ; Nitride composition ; Atmospheric pressure chemical vapor deposition ; Structure ; Optical properties
• 刊名：Applied Surface Science
• 出版年：2011
• 出版时间：15 January 2011
• 年：2011
• 卷：257
• 期：7
• 页码：2428-2431
• 全文大小：173 K

文摘

Titanium nitride (TiN_x) films with various nitride compositions (x) were prepared on glass substrates by atmospheric pressure chemical vapor deposition using TiCl₄ and NH₃ as precursors. The structural, compositional, electrical and optical properties of the films were studied and the results were discussed with respect to nitride composition. The results showed a linear relationship between the lattice constant and the nitride composition. Resistivity of the films was minimized near x = 1. All the TiN_x films exhibited a transmission band with a peak value of about 15 % in the visible region (400–700 nm). As the wavelength increased to transition point (λ_T-R), the reflectance of the obtained films presented a sharp increase and then reached a high value of about 50 % near 2000 nm. Moreover, the red-shift of transmission band and the transition wavelength (λ_T-R) with increasing the nitride composition were also discussed.