Growth of germanium nanowires from bis(acetylacetonato) dichloro germanium

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• 作者：A. Hammami ; C.F. Garnero ; G. Brewer ; D.A. McKeown ; A. Buechele ; I.L. Pegg ; J. Philip
• 关键词：A. Nanostructures ; A. Semiconductors ; B. Vapor deposition ; C. Raman spectroscopy ; C. Electron Microscopy
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2013
• 出版时间：January, 2013
• 年：2013
• 卷：74
• 期：1
• 页码：40-44
• 全文大小：1387 K

文摘

Germanium nanowires were grown by chemical vapor deposition from a bis(acetylacetonato) dichloro germanium precursor. The advantages of this precursor are that it is a solid and sublimes at a relatively low temperature to produce pure germanium nanowires. The nanowires were grown on different substrates such as silicon and quartz and their diameters vary from 20 to 200 nm. X-ray diffraction, Raman and transmission electron microscopy analyses show that the nanowires are crystalline and exhibit germanium crystal structure.