The improvement of nitrogen doped Ge2Sb2Te5 on the phase change memory resistance distributions
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- 作者：Zhen Xua ; b ; zhenxu@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Bo Liua ; liubo@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Yifeng Chena ; Zhonghua Zhanga ; b ; Dan Gaoa ; b ; Heng Wanga ; b ; Zhitang Songa ; Changzhou Wangc ; Jiadong Renc ; Nanfei Zhuc ; Yanghui Xiangc ; Yipeng Zhanc ; Songlin Fenga ; b
- 关键词：Phase change memory (PCM) ; Ge2Sb2Te5 (GST) ; Nitrogen doping ; Resistance distributions
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：116
- 期：Complete
- 页码：119-123
- 全文大小：1767 K
文摘
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A large enough margin (∼2 orders) was achieved in NGST cells.
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Good adhesion eliminates the cells with abnormal high resistance.
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A complete amorphous area with higher resistivity result in a higher switching ratio.