文摘
The goal of this work is to obtain the temperature distribution for skull technique growth for NaI(Tl) scintillator crystal growth. The experiments with 250¡Á180¡Á45 mm3 ingots were made. The temperature distribution along the crystal was checked experimentally during all technological stages: heating the raw materials, melting, crystal growth and cooling of crystal. The temperature was measured by the set of thermocouples, which were installed into the inner volume of the container with feedstock. The temperature gradient for all stages of process was determined. It is shown that deviations of the temperature rate at the control (bottom) thermocouple could be used as criteria for process stage change. It is obtained that for constant melting and crystallization rate during the process one should change the temperature rate of heater.