Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication, characterization, and circuit analysis

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• 作者：Wiljan Smaal ; Charlotte Kjell ; er ; Yongbin Jeong ; Ashutosh Tripathi ; Bas van der Putten ; Antonio Facchetti ; Henry Yan ; Jordan Quinn ; John Anthony ; Kris Myny ; Wim Dehaene ; Gerwin Gelinck
• 关键词：Organic transistor ; Complementary circuits ; Ink-jet printing ; Contact injection ; Contact modification ; Self-assembled monolayers ; Energy delay product
• 刊名：Organic Electronics
• 出版年：2012
• 出版时间：September, 2012
• 年：2012
• 卷：13
• 期：9
• 页码：1686-1692
• 全文大小：450 K

文摘

Complementary thin-film transistor circuits composed of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and a rylene carboxylic diimide derivative for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible foils. The so-called staggered TFT configuration is used, meaning that the semiconductors layers are deposited last. The work-function of the injecting gold electrodes were modified using several self-assembled monolayers (SAMs). For optimized contacts the mobility of the n- and p-channel TFTs was 0.5 cm²/Vs and 0.2 cm²/Vs, respectively. Strongly degraded performance is obtained when the n-channel material was printed on contacts optimized for the p-channel TFT, and vice versa. This illustrates that for CMOS circuits we need careful work-function engineering to allow proper injection for both electrons and holes. We show for the first time that by using a bimolecular mixture for the SAM we can systematically vary the work function, and demonstrate how this affects the performance of discrete n-type and p-type transistors, as well as CMOS inverters and ring oscillators. Under optimal processing conditions we realized complementary 19-stage ring oscillators with 10 ¦Ìs stage delay operating at 20 V.