Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

详细信息    查看全文

• 作者：Giichiro Uchida ; Muneharu Sato ; Hyunwoong Seo ; Kunihiro Kamataki ; Naho Itagaki ; Kazunori Koga ; Masaharu Shiratani
• 关键词：Si nanoparticle ; Quantum-dot sensitized solar cell ; Multiple exciton generation
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：1 October, 2013
• 年：2013
• 卷：544
• 期：Complete
• 页码：93-98
• 全文大小：977 K

文摘

We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH₄/H₂ and CH₄ or N₂ gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH₄ or N₂ plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film.