Effect of sol-gel derived ZnO annealing rate on light-trapping in inverted polymer solar cells
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文摘
Different morphology zinc oxide (ZnO) thin films were prepared by a sol-gel method using two annealing rates and used as the electron transport layers in inverted polymer solar cells. The morphology, optical and structure properties were performed by AFM, UV-vis and XRD in order to study the effect of annealing rates. The undulating morphology of ZnO film fabricated at a slow heating rate of 9 ¡ãC/min possesses a rougher surface than that of ZnO film annealed at the fast heating rate of 56 ¡ãC/min, which provides efficient light-trapping and increases photon absorption.

The resulting device shows 12.6 % and 6.7 % improvement in short current density and fill factor, respectively, compared with the device based on the rapidly annealed ZnO; a maximum power conversion efficiency of 2.55 % was achieved.

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