High mobility top-gated poly(3-hexylthiophene) field-effect transistors with high work-function Pt electrodes

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• 作者：Kang-Jun Baeg ; Dongyoon Khim ; Dong-Yu Kim ; Jae Bon Koo ; In-Kyu You ; Won San Choi ; Yong-Young Noh
• 关键词：Organic field-effect transistors ; Poly(3-hexylthiophene) ; Contact resistance ; Pt electrode
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：3 May 2010
• 年：2010
• 卷：518
• 期：14
• 页码：4024-4029
• 全文大小：1249 K

文摘

We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm²/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor.