Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

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• 作者：Fatemeh  ; Gholamrezaie^a ;   ; ^{fatemeh.gholamrezaie@philips.com} ; Kamal  ; Asadi^a ; Romero A.H.J.  ; Kicken^b ; Bea M.W.  ; Langeveld-Voss^b ; Dago M.  ; de Leeuw^a ;   ; ^c ; Paul W.M.  ; Blom^a ;   ; ^d
• 关键词：Charge injection ; Self-assembled monolayer ; Organic field-effect transistor
• 刊名：Synthetic Metals
• 出版年：2011
• 出版时间：November-December 2011
• 年：2011
• 卷：161
• 期：21-22
• 页码：2226-2229
• 全文大小：630 K

文摘

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 ¡Á 10^? cm² V^? s^?.