Dual top gated graphene transistor in the quantum Hall regime

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• 作者：Ajay K. Bhat^a ; ^b ; Vibhor Singh^b ; ^{vibhor@tifr.res.in} ; Sunil Patil^b ; Mandar M. Deshmukh^b ; ^{deshmukh@tifr.res.in}
• 关键词：A. Graphene ; C. Field effect transistor ; D. p&ndash ; n junctions ; D. Quantum Hall regime
• 刊名：Solid State Communications
• 出版年：2012
• 出版时间：March 2012
• 年：2012
• 卷：152
• 期：6
• 页码：545-548
• 全文大小：495 K

文摘

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple - junctions. Electron transport measurements at low temperature and in the presence of magnetic field show various integer and fractionally quantized conductance plateaus. We explain these results based on the mixing of the edge channels and find that inhomogeneity plays an important role in defining the exact quantization of these plateaus, an issue critical for applications of - junctions.