Top-gate organic field-effect transistors fabricated on paper with high operational stability

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• 作者：Cheng-Yin Wang ; Canek Fuentes-Hernandez ; Wen-Fang Chou ; Bernard Kippelen ; ^{kippelen@gatech.edu}
• 关键词：Organic field-effect transistors ; Top-gate geometry ; Paper ; Operational stability ; Flexibility
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：41
• 期：Complete
• 页码：340-344
• 全文大小：1137 K
• 卷排序：41

文摘

OFETs fabricated on paper with a planarizing buffer layer show excellent device performance. High operational stability through 1000 on-off scans and continuous bias stress (1 h) was demonstrated. Transistors were found to sustain bending test with a train of 0.82%.