Solution-processed low leakage organic field-effect transistors with self-pattern registration based on patterned dielectric barrier

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• 作者：Chang-Min Keum ; Jin-Hyuk Bae ; Min-Hoi Kim ; Wonsuk Choi ; Sin-Doo Lee ; ^{sidlee@plaza.snu.ac.kr}
• 关键词：Organic field-effect transistor ; Patterned dielectric barrier ; Solution-processed ; Leakage reduction ; Selective wettability
• 刊名：Organic Electronics
• 出版年：2012
• 出版时间：May, 2012
• 年：2012
• 卷：13
• 期：5
• 页码：778-783
• 全文大小：898 K

文摘

We demonstrated a new type of a solution-processed organic field-effect transistor (OFET) in a bottom-gate, top-contact geometry where low leakage current and self-pattern registration were achieved using a patterned dielectric barrier (PDB). The PDB of a hydrophobic fluorinated-polymer was produced on the top of a polymeric gate insulator of poly(4-vinylphenyl) by transfer-printing. The PDB enables to effectively screen out the vertical charge flow generated from the gate electrode, and thus the vertical leakage current between the gate and the drain was reduced by two orders of the magnitude compared to the leakage current in a conventional OFET without the PDB. Moreover, the PDB defines spontaneously an active channel pattern from a solution of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS PEN) by means of the selective wettability and the geometrical confinement.