Effects of temperature gradient in the growth of Si_0.5Ge_0.5 crystals by the traveling liquidus-zone method on board the International Space Station

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• 作者：K. Kinoshita^a ; ^{kinoshita.kyoichi@jaxa.jp} ; Y. Arai^a ; Y. Inatomi^a ; T. Tsukada^b ; H. Miyata^c ; R. Tanaka^c
• 关键词：A1. Diffusion ; A1. Convection ; A2. Growth from solution ; A2. Traveling solvent zone growth ; B1. Germanium silicon alloys
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：1 December 2016
• 年：2016
• 卷：455
• 期：Complete
• 页码：49-54
• 全文大小：1419 K
• 卷排序：455

文摘

Homogeneous Si0.5Ge0.5 crystal growth in microgravity. Effects of temperature gradient on crystal quality. Constitutional supercooling unique to the TLZ growth. Critical degree of constitutional supercooling.