Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices
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- 作者：J.H. Parka ; b ; J.H. Kima ; D.-H. Koa ; dhko@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author ; Z. Wub ; D.H. Ahnb ; S.O. Parkb ; K.H. Hwangb
- 关键词：Phase change memory ; Carbon-doped germanium antimony telluride ; Hydrogen bromide ; Ammonia ; Voids ; Endurance
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：616
- 期：Complete
- 页码：502-506
- 全文大小：1134 K
文摘
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Penetrated bromine can change compositions of HBr-etched CGeSbTe films.
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Vaporization of bromide compounds by annealing left void in the etched CGeSbTe film.
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NH3-etched CGeSbTe films did not show any compositional change and void.
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NH3-etched device showed significant increase in set cycles due to void suppression.