文摘
Superlattice-like GeTe/Sb thin film was investigated for its potential application in phase change memory. Compared with GeTe material, lower energy barrier for crystallization is realized for GeTe/Sb thin film. In crystallization process, less internal induced stress exists in GeTe/Sb thin film than GeTe. A fast operation speed of 8 ns and a good endurance of 6.3 × 106 cycles were realized for GeTe/Sb thin film. The superlattice-like GeTe/Sb thin film is a promising candidate for high speed and low power phase change memory application.