Improvement of the short channel effect in PMOSFETs using cold implantation
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- 作者：Suk Hun Leea ; Se Geun Parkb ; Seong Hoon Jeongb ; Hyuck-Chai Jungb ; Il Gweon Kimb ; Dong-Ho Kanga ; Hyo-Jik Nama ; Dae Jung Kimb ; Kyu Pil Leeb ; Joo Sun Choib ; Woosuk Jungc ; Yongkook Parka ; Changhwan Choic ; cchoi@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author ; Jin-Hong Parka ; jhpark9@skku.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：A. Semiconductor ; A. Electronic materials ; D. Diffusion ; D. Defect ; D. Electrical properties
- 刊名：Materials Research Bulletin
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：82
- 期：Complete
- 页码：31-34
- 全文大小：1209 K
文摘
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The effect of cold-implantation was investigated in terms of dopant diffusion.
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VTH roll-off, Ioff increment, and contact resistance was improved by cold-IIP.
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The standby current at a short tPD was reduced effectively for the cold-IIP case.