Improved GeOI substrates for pMOSFET off-state leakage control

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• 作者：K. Romanjek ; E. Augendre ; W. Van Den Daele ; B. Gr ; champ ; L. Sanchez ; C. Le Royer ; J.-M. Hartmann ; B. Ghyselen ; E. Guiot ; K. Bourdelle ; S. Cristoloveanu ; F. Boulanger ; L. Clavelier
• 关键词：Germanium on insulator (GeOI) ; pMOSFET ; Parasitic leakage ; Ge-buried oxide (BOX) interface ; Silicon passivation
• 刊名：Microelectronic Engineering
• 出版年：2009
• 出版时间：July-September 2009
• 年：2009
• 卷：86
• 期：7-9
• 页码：1585-1588
• 全文大小：697 K

文摘

The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to reduce the parasitic leakage current while preserving Ge-like back channel transport properties.