Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

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• 作者：A. Ohata ; Y. Bae ; S. Cristoloveanu ; T. Signamarcheix ; J. Widiez ; B. Ghyselen ; O. Faynot ; L. Clavelier
• 刊名：Microelectronics Reliability
• 出版年：2012
• 出版时间：November, 2012
• 年：2012
• 卷：52
• 期：11
• 页码：2602-2608
• 全文大小：1053 K

文摘

Local Deep-Amorphization (DA) and subsequent Solid-Phase Epitaxial Regrowth (SPER) are envisioned for the co-integration of devices with hybrid surface orientation. The impact of these processes on the electrical characteristics of p-channel MOSFETs with 20 nm thick film and HfO₂ gate insulator/metal gate along the ¡´1 1 0¡µ direction on a (1 1 0) substrate is studied. No deterioration of transconductance and subthreshold swing at the front or back channels was induced by DA/SPER. The transconductance enhancement for the front and back channels on (1 1 0) substrates reaches +200 % and +230 % gain, respectively. For these transistors, we also discuss the variation of the external resistance and their operation in double-gate mode.