Thermal and electrical investigation of the reverse bias degradation of silicon solar cells

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• 作者：Aless ; ro Compagnin ; Matteo Meneghini ; Marco Barbato ; Valentina Giliberto ; Andrea Cester ; Massimo Vanzi ; Giovanna Mura ; Enrico Zanoni ; Gaudenzio Meneghesso
• 刊名：Microelectronics Reliability
• 出版年：2013
• 出版时间：September-November, 2013
• 年：2013
• 卷：53
• 期：9-11
• 页码：1809-1813
• 全文大小：1834 K

文摘

This work presents a detailed analysis of the degradation of Si-based solar cells submitted to reverse-bias stress; the study is based on electrical, electro-optical and thermal measurements, carried out at the different stages of the stress tests. The results show that exposure to reverse bias may induce severe modifications of the cell electro-optical performance: the most relevant failure mechanism is the increase in localized shunt resistance components. The changes in the leakage paths have been investigated both through infrared thermal imaging and SEM measurements.