Fundamental effects of hydrogen on cohesion properties of Cu/W interfaces

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• 作者：G.C. Ma ; J.L. Fan ; H.R. Gong ; ^{gonghr@csu.edu.cn}
• 关键词：A. Cu/W interface ; C. Hydrogen doping ; D. Interface cohesion
• 刊名：Solid State Communications
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：250
• 期：Complete
• 页码：79-83
• 全文大小：488 K
• 卷排序：250

文摘

Solution energies of H at W are bigger than those of H at Cu/W interface. H atoms in W lattice have a tendency to diffuse into Cu/W interface. Location of H has an important effect on interface cohesion properties. Calculated results are in good agreement with experimental observations. Present results are discussed in terms of electronic structures.