Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method
详细信息 查看全文
- 作者：P. Jina ; G. Hea ; hegang@ahu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; P.H. Wanga ; wangpeihong2002@ahu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; M. Liub ; mliu@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author ; D.Q. Xiaoa ; J. Gaoa ; H.S. Chena ; X.S. Chenc ; Z.Q. Suna ; M. Zhanga ; J.G. Lvd ; jglv@hftc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Y.M. Liua
- 关键词：High-k gate dielectrics ; HfTiOx thin films ; Sol-gel processing ; Optical properties ; Electrical properties
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：688
- 期：part_PB
- 页码：925-932
- 全文大小：2590 K
文摘
- •
Sol-gel-derived HfTiOx gate dielectrics have been deposited on Si substrates.
- •
Increase of band gap is observed with the increase of baking temperature.
- •
HfTiOx films deposited at 200 °C displays excellent performance.
- •
The leakage current conduction mechanisms are also discussed in detail.