Improved electrical properties of p-type CuGaO2 semiconductor thin films through Mg and Zn doping
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- 关键词：A. Films ; A. Sol-gel processes ; C. Electrical properties ; E. Functional applications
- 刊名：Ceramics International
- 出版年：2017
- 出版时间：1 February 2017
- 年：2017
- 卷：43
- 期：2
- 页码：2563-2567
- 全文大小：731 K
- 卷排序：43
文摘
Undoped, Mg-doped, and Zn-doped p-type CuGaO2 semiconductor thin films were deposited on quartz substrates by a sol-gel spin coating method. The effects of the two dopants (Mg and Zn) on the structural features and electrical properties of the CuGaO2-based thin films were investigated. The doping concentration was maintained at 1 at% in the impurity doping precursor solutions. X-ray diffraction (XRD) results showed that only the undoped CuGaO2 thin films had a single delafossite phase; Mg- and Zn-doped thin films exhibited mixed CuGaO2 and CuGa2O4 phases. Scanning probe microscopy (SPM) images showed that the surfaces of the dense CuGaO2-based thin films exhibited obviously granular structures. Hall measurements confirmed that the three oxide semiconductor thin films had p-type conductivity. Compared with undoped CuGaO2 thin films, the Mg- and Zn-doped thin films exhibited improvements in electrical properties, and the Zn-doped thin films had the highest mean carrier concentration of 3.49×1016 cm−3. In addition, three kinds of n-Si/p-CuGaO2-based thin film heterojunctions were fabricated and their current-voltage (I-V) characteristics were examinated. It was found that the n-Si/p-CuGaO2:Zn heterojunction exhibited a distinct rectifying I-V characteristic with a forward turn-on voltage of 2.9 V.