Residue-free room temperature UV-nanoimprinting of submicron organic thin film transistors

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• 作者：C. Auner ; U. Palfinger ; H. Gold ; J. Kraxner ; A. Haase ; T. Haber ; M. Sezen ; W. Grogger ; G. Jakopic ; J.R. Krenn ; G. Leising ; B. Stadlober
• 关键词：Organic transistors ; Thin films ; UV-nanoimprinting ; Miniaturization ; Submicron ; Imprint resist
• 刊名：Organic Electronics
• 出版年：2009
• 出版时间：December 2009
• 年：2009
• 卷：10
• 期：8
• 页码：1466-1472
• 全文大小：944 K

文摘

In this study we report on an innovative nanoimprint process for the fabrication of entirely patterned submicron OTFTs in a bottom-gate configuration. The method is based on UV-Nanoimprint Lithography (UV-NIL) combined with a novel imprint resist whose outstanding chemical and physical properties are responsible for the excellent results in structure transfer. In combination with a pretreated stamp the UV-curable resist enables residue-free imprinting thus making etching obsolete. A subsequent lift-off can be done with water. The UV-NIL process implies no extra temperature budget, is time saving due to short curing times, eco-friendly due to a water-based lift-off, simple because it is etch-free and completely r2r compatible. It works perfectly even if ultra-thin organic and hybrid films are used as gate dielectrics. On this basis entirely patterned functional submicron OTFTs with pentacene as the semiconductor are fabricated showing clear saturation, low switch-on voltage (3 V) and a sufficiently high on–off ratio (10<sup>3sup>).