Thermal induced structural evolution and performance of Cu2ZnSnSe4 thin films prepared by a simple route of ion-beam sputtering deposition
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文摘

A simple method of fabricating CZTSe thin film by ion-beam sputtering without post-selenization was proposed.

The optimized CZTSe films were obtained at relatively low annealing temperature at 400 °C.

The prototype devices of distinct photovoltaic affect and efficiency of about 4.67%.

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