Relationship between Ga³⁺ concentration and luminescence properties of Eu₂(MoO₄)₃ films at low annealing temperature

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• 作者：Xue Yin ; Shenwei Wang ; Ling Li ; Guangyao Mu ; Wubiao Duan ; Lixin Yi ; ^{lxyi@bjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Photoluminescence ; Eu2(MoO4)3 ; Ga3+ ; Charge compensation ; Low temperature
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：15 February 2016
• 年：2016
• 卷：483
• 期：Complete
• 页码：4-7
• 全文大小：797 K

文摘

Ga³⁺-doped Eu₂(MoO₄)₃ films were prepared by electron beam evaporation and annealed at 400 °C–800 °C in oxidizing atmosphere, and the relationship between Ga³⁺ concentration and luminescence properties of the films was explored combining the characterization methods of XRD, excitation, emission spectra and decay curves. It was found that intensity ratio I(⁵D₀–⁷F₂)/I(⁵D₀–⁷F₁) was extremely susceptible to Ga³⁺ concentration, and the luminescence intensity was significantly influenced by the doping of Ga³⁺. The intensity increased with Ga³⁺ concentration ranging from 0 to 0.65 mol and reached a maximum at 0.3 mol and decreased when exceeding 0.65 mol. Finally, the effect of annealing temperature on photoluminescence was also obtained.