Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

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• 作者：Liuan Li ; Hongdong Li ; Xianyi Lü ; Shaoheng Cheng ; Qiliang Wang ; Shiyuan Ren ; Junwei Liu ; Guangtian Zou
• 关键词：Freestanding CVD diamond films ; Boron doping ; Reaction pressure ; Electrical properties ; Residual stress
• 刊名：Applied Surface Science
• 出版年：2010
• 出版时间：1 January 2010
• 年：2010
• 卷：256
• 期：6
• 页码：1764-1768
• 全文大小：942 K

文摘

In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.