Simulation of the Si-CCD irradiated by millisecond pulse laser

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• 作者：Mingxin Li ; Guangyong Jin ; ^{jgycust@163.com} ; Yong Tan
• 关键词：42.62.-b ; 44.10.+I ; 85.60.Gz
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：131
• 期：Complete
• 页码：67-71
• 全文大小：692 K
• 卷排序：131

文摘

Based on the Fourier heat conduction equation and the thermoelastic equation, the thermal-stress coupling model of the Si-CCD irradiated by millisecond pulse laser was established, the time-space distribution of the temperature field and the stress field on the Si-CCD was calculated. The results show that: the damage firstly occurred in the color filter layer; increased the laser energy density, part of the microlens and the color filters were missing; then continued to increase the laser energy density, the photosensitive area in the N-Si layer was melting; when the channels in the N-Si layer were damaged, the Si-CCD was under functional loss. In this paper, the simulation results were consistent with the experiment results.