The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery
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文摘

Remarkable degradation of output property is observed in tritium beta-voltaic battery.

X-ray emitted from tritium source is the main factor which leads to the degradation.

Radiation induced positive charge mainly influences open-circuit voltage and Si–SiO2 interface trap mainly influences short-circuit current.

Beta particle has positive effect in eliminating the radiation damage by x-ray.

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