Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs

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• 作者：J.A. Villada ; S. Jimé ; nez-S ; oval ; M. L&#xf3 ; pez-L&#xf3 ; pez ; L. Ba&#xf1 ; os ; M.E. Rodrí ; guez-Garcí ; a
• 关键词：Silicon doped GaAs ; Grazing incident X-ray diffraction ; Oval defects
• 刊名：Physica B
• 出版年：2010
• 出版时间：1 May 2010
• 年：2010
• 卷：405
• 期：9
• 页码：2185-2188
• 全文大小：1030 K

文摘

Grazing incident X-ray diffraction is used to study oval defects on the surface of silicon doped GaAs layers grown by means of molecular beam epitaxy. The amplitude of the (1 1 3) peak from the diffraction data is associated with the defect density obtained from scanning electron microscopy images. These images reveal two different kinds of defects for all samples. It was proven that variations in the silicon effusion cell temperature affect the defect density. By increasing the cell temperature the defect density increases.