The effect of oxygen content on the performance of low-voltage organic phototransistor memory
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- 作者：Xiaohui Liua ; Mingjun Zhanga ; Guifang Donga ; donggf@mail.tsinghua.edu.cn" class="auth_mail ; Xinyue Zhangb ; Yapei Wangb ; Lian Duana ; Liduo Wanga ; Yong Qiua ; qiuy@mail.tsinghua.edu.cn" class="auth_mail
- 关键词：Organic phototransistor memory ; Oxygen content ; Photoresponsivity ; Retention time
- 刊名：Organic Electronics
- 出版年：July 2014
- 年：2014
- 卷：15
- 期：7
- 页码：1664-1671
- 全文大小：2645 K
文摘
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The increasing O2 ratio during the fabrication process improves the OPTM performance.
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The oxygen content can alter the roughness and surface energy of Ta2O5 film.
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Trap density changes are certificated by KFM and vacuum-ultraviolet spectroscopy.
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The oxygen content can modulate the electron trap density in the Ta2O5 film.