Mechanical strain induced changes in electrical characteristics of flexible, non-volatile ferroelectric OFET based memory

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• 作者：Damien Thuau ; ^{damien.thuau@u-bordeaux.fr" class="auth_mail" title="E-mail the corresponding author} ; Mamatimin Abbas ; Guillaume Wantz ; Lionel Hirsch ; Isabelle Dufour ; Cé ; dric Ayela ; ^{cedric.ayela@u-bordeaux.fr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Poly(VinyliDene Fluoride/TriFluoroEthylene) ; Ferroelectric organic field effect transistor ; Flexible memory ; Mechanical strain
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：40
• 期：Complete
• 页码：30-35
• 全文大小：1694 K

文摘

Investigation of mechanical strain on the electrical characteristics of ferroelectric OFET base memory is crucial for novel flexible printed circuit. In this regards, the effects of compressive and tensile strain applied in parallel, 45° angle and perpendicular to the semiconductor channel were studied showing critical consideration to be taken into account before designing flexible memories.