Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates
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- 作者：Guomei Chen ; Zifeng Ni ; nizf@jiangnan.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Laijun Xu ; Qingzhong Li ; Yongwu Zhao ; zhaoyw@jiangnan.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Chemical mechanical polishing (CMP) ; Silicon carbide (SiC) ; Silica ; Ceria
- 刊名：Applied Surface Science
- 出版年：2015
- 出版时间：30 December 2015
- 年：2015
- 卷：359
- 期：Complete
- 页码：664-668
- 全文大小：932 K
文摘
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The performance of colloidal silica and ceria based slurries on CMP of 6H-SiC substrates were evaluated.
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There was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries.
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For the ceria based slurries, a higher MRR was obtained, especially in strong acid KMnO4 environment.
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The maximum MRR of silica and ceria based slurries were 185 nm/h and 1089 nm/h respectively.