The electrical properties of bulk GaN crystals grown by HVPE
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- 作者：Hong Gua ; Guoqiang Rena ; Taofei Zhoua ; Feifei Tiana ; Yu Xua ; Yumin Zhanga ; Mingyue Wanga ; Jianfeng Wanga ; b ; Ke Xua ; b ; kxu2006@sinano.ac.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：A2. Growth from vapor ; A2. Single-crystal growth ; A3. Hydride vapor phase epitaxy ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 February 2016
- 年：2016
- 卷：436
- 期：Complete
- 页码：76-81
- 全文大小：1699 K
文摘
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The samples investigated in this work are sliced from the same bulk crystal.
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The dislocation density of samples ranges from 2.4×106 cm−2 to 2.3×105 cm−2.
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The evolution of dislocation and impurity with thickness is presented.
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The mechanism determining the electrical properties of bulk GaN is discussed.
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HVPE is identified as an effective approach in growing thick bulk GaN.