Quality-enhanced GaN epitaxial films grown on (La, Sr) (Al, Ta)O3 substrates by pulsed laser deposition
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- 作者：Wenliang Wanga ; Weijia Yanga ; Guoqiang Lia ; b ; msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Epitaxial growth ; Thin films ; X-ray technique ; Morphology ; Structural ; Hetero-interface.
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：168
- 期：Complete
- 页码：52-55
- 全文大小：1434 K
文摘
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High-quality GaN films have been epitaxially grown on LSAT substrates by PLD.
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Effect of temperature on the property of GaN films grown by PLD is studied in detail.
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Abrupt and sharp GaN/LSAT interfaces achieved in this work are of great importance.