A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition
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- 作者：Wenliang Wanga ; b ; Weijia Yanga ; b ; Haiyan Wanga ; b ; Yunnong Zhua ; b ; Meijuan Yanga ; b ; Junning Gaoa ; b ; c ; msjngao@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guoqiang Lia ; b ; c ; msgli@scut.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：c-plane GaN ; a-plane GaN ; c-plane sapphire ; r-plane sapphire ; X-ray rocking curve
- 刊名：Vacuum
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：128
- 期：Complete
- 页码：158-165
- 全文大小：2060 K
文摘
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The c-plane and a-plane GaN epitaxial films have been grown on sapphire substrates by pulsed laser deposition.
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The properties of c-plane and a-plane GaN epitaxial films are studied comparatively.
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The further insight of c-plane and a-plane GaN epitaxial films grown on sapphire substrates is well analyzed.