Power gain assessment of ITO based Transparent Gate Recessed Channel (TGRC) MOSFET for RF/wireless applications
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- 作者：Ajay Kumar ajaykumar@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author ; Neha Gupta nehagupta@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author ; Rishu Chaujar ; rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：CRC-MOSFET ; Intrinsic delay ; ITO ; Power gains ; RF ; TGRC-MOSFET
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：91
- 期：Complete
- 页码：290-301
- 全文大小：2902 K
文摘
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A novel 3-D Transparent Recessed Channel (TGRC) MOSFET is proposed for HF applications.
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RF performance in terms of power gains, intrinsic delay, cut-off and maximum oscillator frequency.
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fT and fMAX enhances by 56% and 154% respectively with an appreciably low intrinsic delay in TGRC MOSFET.
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TGRC MOSFET performance further improves with tuning of device parameter such as Lg, NJD, tox and NA.
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Proposed device is better solution for high performance System-On-Chip, low noise and RF applications.