Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET
详细信息 查看全文
- 作者：Neha Gupta nehagupta@dtu.ac.in" class="auth_mail" title="E-mail the corresponding author ; Rishu Chaujar ; rishu.phy@dce.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：Gate stack ; Gate electrode workfunction engineering ; Analog ; Linearity ; Harmonic distortion ; Silicon nanowire
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：630-641
- 全文大小：3343 K
文摘
- •
Optimizes the Gate Engineering Scheme for enhanced Analog and Intermodulation Performance.
- •
HfO2 as a gate stack exhibit high linearity at low gate bias of 0.56 V with higher IIP3 (6.21 dBm) and low IMD3 (9.6 dBm).
- •
The DC bias point shifted towards lower input voltage, implies lowering of dynamic power consumption for circuit applications.
- •
Characteristics/performance of GS-GEWE-SiNW is further improved by modulating the workfunction difference of metal gate (ΔW).
- •
SiNW MOSFET with HfO2 as a gate stack and ΔW of 4.4 eV, considered as promising one for low power ICs and Linear amplifiers.