Computer simulation of a thermoactivated process of atomic structure reconstruction in thin films
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- 作者：Starostenkov ; M.D. ; Andruhova ; O.V. ; Lomskikh ; N.V. ; Gurova ; N.M. ; Borissov ; A.V.
- 关键词：Vacancy ; Diffusion ; Thin films ; Superstructures
- 刊名：Computational Materials Science
- 出版年：1999
- 出版时间：February, 1999
- 年：1999
- 卷：14
- 期：1-4
- 页码：197-202
- 全文大小：1.04 M
文摘
A possible influence of different factors on the structure and stability of binary thin films is investigated using methods of computer simulation. Equilibrium states of this thin film and their stability were analyzed depending on the temperature, topology of monophase layers, concentration of vacancies and coordinational sphere number taken into account at an interatomic interaction.